Statistical Strategies to Capture Correlation Between Overshooting Effect and Propagation Delay Time in Nano-CMOS Inverters

In this paper, we model statistical correlation between overshooting effect and propagation delay time in nano-CMOS technology considering the influence of intrinsic parameter fluctuations caused by discreteness charge granularity matter. The impact input slew rate, output capacitive load, supply voltage on is comprehensively studied. Moreover, propose two alternative approaches which are capable reproducing as well mean standard deviation both overshoot voltage. We evaluate accuracy these against accurate Monte-Carlo simulations. It shown that correlations almost preserved using approaches.